Armenia’s Liana Khachatryan wins microelectronics Olympiad
The Yerevan final also ended with a shared third prize and an engineering-solution award for Armenian competitors. France’s Assane Ndiaye took second place.

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Liana Khachatryan of Armenia won first prize at the 21st International Microelectronics Olympiad, whose final was held in Yerevan on 3 November.
The result follows Ali Ramezani’s victory for the United Arab Emirates at the 2025 Olympiad. This year’s first round took place in more than 30 countries across five continents, Armenpress said.
| Award | Recipient and country |
|---|---|
| Second prize | Assane Ndiaye, France |
| Shared third prize | Nathalie Jouljian, Lebanon; Artur Saribekyan, Armenia; Anton Glinin, Russia |
| Best Engineering Solution | Haykanush Petrosyan, Armenia |
Petrosyan received the engineering-solution award named after Arman Jagharyan. The awards ceremony was part of the two-day Silicon Mountains 2026 summit in Yerevan.
From local rounds to the final
The Olympiad is open to specialists under 30 and is organized by Synopsys Armenia in cooperation with the IEEE Test Technology Technical Council. TalTech’s competition notice said the first stage took place locally in each participating country in summer 2026, and national winners were sponsored to attend the Yerevan final, where contestants faced more creative and complex problems.
TalTech’s notice lists digital, analog and mixed-signal integrated-circuit design and testing, semiconductor devices and technology, and mathematical and algorithmic issues in electronic design automation among the competition’s subjects.
The International Microelectronics Forum is scheduled for 4 November as part of Silicon Mountains 2026.
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